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2SD1757KT146/Q

Description
500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, SMT3, SC-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SD1757KT146/Q Overview

500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, SMT3, SC-59, 3 PIN

2SD1757KT146/Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.4 V
Base Number Matches1
2SD1757K
Transistors
Power Transistor (15V, 0.5A)
2SD1757K
Features
1) Low V
CE(sat)
. (Typ.8mV at I
C
/I
B
= 10/1mA)
2) Optimal for muting.
External dimensions
(Unit : mm)
(1)
0.4
(3)
Absolute maximum ratings
(Ta=25°C)
0.15
1.6
2.8
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
6.5
0.5
0.2
150
−55
to
+150
Unit
V
V
V
A
W
°C
°C
0.3to0.6
0to0.1
Each lead has same dimensions
0.8
1.1
0.95 0.95
1.9
2.9
(2)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
FE
2SD1757K
SMT3
QRS
AA
T146
3000
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
15
6.5
120
Typ.
0.1
150
15
Max.
0.5
0.5
0.4
560
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=20V
V
EB
=4V
I
C
/I
B
=500mA/50mA
V
CE
/I
C
=3V/100mA
V
CE
=5V
, I
E
=−50mA
, f=100MHz
V
CB
=10V
, I
E
=0A
, f=1MHz
Conditions
Rev.A
1/3

2SD1757KT146/Q Related Products

2SD1757KT146/Q 2SD1757KT146/R 2SD1757KT146/S
Description 500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, SMT3, SC-59, 3 PIN 500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, SMT3, SC-59, 3 PIN 500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, SMT3, SC-59, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Parts packaging code SC-59 SC-59 SC-59
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compli compli compli
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 180 270
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 e1 e1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.4 V 0.4 V 0.4 V
Base Number Matches 1 1 1
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