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DS1104SG26

Description
Rectifier Diode, 1 Element, 1300A, 2600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size199KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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DS1104SG26 Overview

Rectifier Diode, 1 Element, 1300A, 2600V V(RRM),

DS1104SG26 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current16000 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1300 A
Maximum repetitive peak reverse voltage2600 V
surface mountNO

DS1104SG26 Related Products

DS1104SG26 DS1104SG28 DS1104SG27 DS1104SG30 DS1104SG29 DS1104SG25
Description Rectifier Diode, 1 Element, 1300A, 2600V V(RRM), Rectifier Diode, 1 Element, 1300A, 2800V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 1880A, 2700V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1880A, 3000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 1880A, 2900V V(RRM), Silicon, Rectifier Diode, 1 Element, 1300A, 2500V V(RRM),
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current 16000 A 16000 A 16000 A 16000 A 16000 A 16000 A
Number of components 1 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1300 A 1300 A 1300 A 1300 A 1530 A 1300 A
Maximum repetitive peak reverse voltage 2600 V 2800 V 2700 V 3000 V 2900 V 2500 V
surface mount NO NO NO NO NO NO

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