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2SC2905

Description
VHF BAND, Si, NPN, RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size13KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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2SC2905 Overview

VHF BAND, Si, NPN, RF POWER TRANSISTOR

2SC2905 Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityNPN
Maximum collector current20 A
Maximum Collector-Emitter Voltage18 V
Processing package description0.500 INCH, FM-6
stateACTIVE
packaging shaperound
Package SizeFlange mounting
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationUNSPECIFIED
Packaging MaterialsCeramic, Metal-SEALED COFIRED
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeRF power
highest frequency bandVERY high frequency band
Maximum Collector Base Capacitance420 pF

2SC2905 Related Products

2SC2905 ASI10686
Description VHF BAND, Si, NPN, RF POWER TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR
Number of terminals 6 6
Transistor polarity NPN NPN
Maximum collector current 20 A 20 A
Maximum Collector-Emitter Voltage 18 V 18 V
Processing package description 0.500 INCH, FM-6 0.500 INCH, FM-6
state ACTIVE ACTIVE
packaging shape round round
Package Size Flange mounting Flange mounting
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Packaging Materials Ceramic, Metal-SEALED COFIRED Ceramic, Metal-SEALED COFIRED
transistor applications amplifier amplifier
Transistor component materials silicon silicon
Transistor type RF power RF power
highest frequency band VERY high frequency band VERY high frequency band
Maximum Collector Base Capacitance 420 pF 420 pF

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