0.35A, 20V, SILICON, SIGNAL DIODE
Parameter Name | Attribute value |
Maker | STMicroelectronics |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1 V |
JESD-30 code | O-LALF-W2 |
Maximum non-repetitive peak forward current | 7.5 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 0.35 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.33 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 20 V |
Maximum reverse current | 10 µA |
Maximum reverse recovery time | 0.01 µs |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | WIRE |
Terminal location | AXIAL |
BAT47AZ2 | BAT47AZ1 | BAT48B2 | BAT47AR1 | BAT47B2 | BAT47AR2 | BAT48AZ1 | BAT48AR2 | BAT48AZ2 | BAT48AR1 | |
---|---|---|---|---|---|---|---|---|---|---|
Description | 0.35A, 20V, SILICON, SIGNAL DIODE | 0.35A, 20V, SILICON, SIGNAL DIODE | 0.35A, 40V, SILICON, SIGNAL DIODE | 0.35A, 20V, SILICON, SIGNAL DIODE | 0.35A, 20V, SILICON, SIGNAL DIODE | 0.35A, 20V, SILICON, SIGNAL DIODE | 0.35A, 40V, SILICON, SIGNAL DIODE | 0.35A, 40V, SILICON, SIGNAL DIODE | 0.35A, 40V, SILICON, SIGNAL DIODE | 0.35A, 40V, SILICON, SIGNAL DIODE |
package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1 V | 1 V | 0.9 V | 1 V | 1 V | 1 V | 0.9 V | 0.9 V | 0.9 V | 0.9 V |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
Maximum non-repetitive peak forward current | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A | 7.5 A |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.35 A |
Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Maximum power dissipation | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 20 V | 20 V | 40 V | 20 V | 20 V | 20 V | 40 V | 40 V | 40 V | 40 V |
Maximum reverse current | 10 µA | 10 µA | 25 µA | 10 µA | 10 µA | 10 µA | 25 µA | 25 µA | 25 µA | 25 µA |
Maximum reverse recovery time | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs | 0.01 µs |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Maker | STMicroelectronics | STMicroelectronics | - | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |