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PTFA212401F

Description
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 鈥?2170 MHz
CategoryDiscrete semiconductor    The transistor   
File Size475KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

PTFA212401F Overview

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 鈥?2170 MHz

PTFA212401F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLATPACK, R-CDFP-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
JESD-609 codee4
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
PTFA212401F
Package H-37260-2
Features
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
35
30
Thermally-enhanced packages, Pb-free and
RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
Adjacent Channel Power Ratio (dB)
-30
-35
ACPR Up
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
25
ACPR Low
20
15
Drain Efficiency (%)
Efficiency
10
5
Average Output Power (dBm)
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 04, 2009-10-05

PTFA212401F Related Products

PTFA212401F PTFA212401E
Description Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 鈥?2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 鈥?2170 MHz
Is it Rohs certified? conform to conform to
package instruction FLATPACK, R-CDFP-F2 FLANGE MOUNT, R-CDFM-F2
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND
JESD-30 code R-CDFP-F2 R-CDFM-F2
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface GOLD GOLD
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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