2N6717 datasheet, PDF - EEWORLD Datasheet

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2N6717: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size96KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]

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2N6717 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN

2N6717 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-237
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-237AA
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.35 V
Base Number Matches	1

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Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	conform to	incompatible	conform to	incompatible
Parts packaging code	TO-237	TO-237	TO-237	TO-237	TO-237AA	TO-237AA	TO-237	TO-237	TO-237	TO-237
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	TO-237, 3 PIN	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3
Contacts	3	3	3	3	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compliant	compliant	compliant	compliant
Maximum collector current (IC)	1 A	1.5 A	1 A	0.5 A	0.1 A	0.1 A	1.5 A	0.05 A	1.5 A	0.7 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	40	40	40	100	70	100	40
JEDEC-95 code	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA	TO-237AA
JESD-30 code	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	THROUGH-HOLE	WIRE	WIRE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	WIRE	THROUGH-HOLE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	30 MHz	50 MHz	50 MHz	120 MHz	120 MHz	120 MHz	50 MHz
ECCN code	EAR99	EAR99	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99
Collector-emitter maximum voltage	80 V	60 V	100 V	300 V	-	-	30 V	150 V	30 V	60 V
JESD-609 code	e0	e0	e0	e0	e0	e0	-	e0	-	e0
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-	-	-	-
Maximum power dissipation(Abs)	2 W	2 W	2 W	2 W	2 W	2 W	1 W	-	1 W	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
VCEsat-Max	0.35 V	0.35 V	0.35 V	-	-	-	2 V	0.5 V	2 V	0.7 V
Base Number Matches	1	1	1	1	1	1	1	-	-	-

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