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2N6716

Description
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size96KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
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2N6716 Overview

Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN

2N6716 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-237
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-237AA
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max0.35 V
Base Number Matches1

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Description Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, PLASTIC, TO-237, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible conform to incompatible conform to incompatible
Parts packaging code TO-237 TO-237 TO-237 TO-237 TO-237AA TO-237AA TO-237 TO-237 TO-237 TO-237
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 TO-237, 3 PIN CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli compliant compliant compliant compliant
Maximum collector current (IC) 1.5 A 1 A 1 A 0.5 A 0.1 A 0.1 A 1.5 A 0.05 A 1.5 A 0.7 A
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 40 40 40 100 70 100 40
JEDEC-95 code TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA TO-237AA
JESD-30 code O-PBCY-T3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-T3 O-PBCY-W3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE WIRE WIRE WIRE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE WIRE THROUGH-HOLE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 30 MHz 50 MHz 50 MHz 120 MHz 120 MHz 120 MHz 50 MHz
ECCN code EAR99 EAR99 EAR99 EAR99 - - EAR99 EAR99 EAR99 EAR99
Collector-emitter maximum voltage 60 V 80 V 100 V 300 V - - 30 V 150 V 30 V 60 V
JESD-609 code e0 e0 e0 e0 e0 e0 - e0 - e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - - - -
Maximum power dissipation(Abs) 2 W 2 W 2 W 2 W 2 W 2 W 1 W - 1 W -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
VCEsat-Max 0.35 V 0.35 V 0.35 V - - - 2 V 0.5 V 2 V 0.7 V
Base Number Matches 1 1 1 1 1 1 1 - - -

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