LDT5210T datasheet, PDF - EEWORLD Datasheet

LDT5210T: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size129KB，4 Pages; ManufacturerMicronova Technology Inc

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LDT5210T Overview

Transistor

Parameter Name	Attribute value
Maker	Micronova Technology Inc
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
surface mount	YES

	LDT5210T	LDT5210
Description	Transistor	Transistor
Maker	Micronova Technology Inc	Micronova Technology Inc
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A
Configuration	Single	Single
Minimum DC current gain (hFE)	200	200
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W
surface mount	YES	YES

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