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LDT5210

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerMicronova Technology Inc
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LDT5210 Overview

Transistor

LDT5210 Parametric

Parameter NameAttribute value
MakerMicronova Technology Inc
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES

LDT5210 Related Products

LDT5210 LDT5210T
Description Transistor Transistor
Maker Micronova Technology Inc Micronova Technology Inc
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 200 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W
surface mount YES YES
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