2N2484HR
Hi-Rel NPN bipolar transistor 60 V, 50 mA
Datasheet
-
production data
Features
1
2
3
Parameter
BV
CEO
3
Value
60 V
50 mA
> 250
- 65 °C to + 200 °C
TO-18
3
I
C
(max)
h
FE
at 10 V - 150 mA
4
1
2
1
2
Operating temperature range
LCC-3
LCC-3UB
•
Linear gain characteristics
•
Hermetic packages
•
ESCC qualified
•
European preferred part list - EPPL
Figure 1. Internal schematic diagram
Description
The 2N2484HR is a silicon planar epitaxial NPN
transistor specifically designed for aerospace Hi-
Rel applications and housed in hermetic
packages. It complies with the ESCC 5000
qualification standard. It is ESCC qualified
according to the 5201-001 specification. In case
of conflict between this datasheet and ESCC
detailed specification, the latter prevails.
Table 1. Device summary
Order codes
2N2484UB1
2N2484UB06
2N2484UB07
SOC2484
SOC2484HRB
2N2484HR
ESCC Part
number
-
5201/001/06
5201/001/07
-
5201/001/04 or 05
5201/001/01or 02
Quality
Level
Engineering
Model
ESCC Flight
ESCC Flight
Engineering
Model
ESCC Flight
ESCC Flight
Packages
LCC-3UB
LCC-3UB
LCC-3UB
LCC-3
LCC-3
TO-18
Lead Finish
Gold
Gold
Solder Dip
Gold
Gold / Solder
Dip
(1)
Gold / Solder
Dip
(1)
Mass (g)
0.06
0.06
0.06
0.06
0.06
0.40
EPPL
-
-
-
-
-
Y
1. Depending ESCC part number mentioned on the purchase order.
February 2013
This is information on a product in full production.
DocID17734 Rev 2
1/14
www.st.com
14
Contents
2N2484HR
Contents
1
2
3
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/14
DocID17734 Rev 2
2N2484HR
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
2N2484HR
P
TOT
Total dissipation at T
amb
≤
25 °C
2N2484UB1 /
SOC2484HRB
2N2484UB1 /
SOC2484HRB
(1)
P
TOT
T
STG
T
J
Total dissipation at T
c
≤
25 °C
Storage temperature
Max. operating junction temperature
2N2484HR
Value
60
60
6
50
0.36
0.36
0.73
1.2
- 65 to 200
200
Unit
V
V
V
mA
W
W
W
W
°C
°C
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3. Thermal data for through-hole package
Symbol
R
thJC
R
thJA
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
TO-18
146
486
Unit
°C/W
°C/W
Table 4. Thermal data for SMD package
Symbol
Parameter
Thermal resistance junction-ambient max
R
thJA
Thermal resistance junction-ambient
(1)
max
LCC-3
LCC-3UB
486
°C/W
239
Unit
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
DocID17734 Rev 2
3/14
Electrical characteristics
2N2484HR
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 5.
Symbol
V
(BR)CBO
V
(BR)CEO (2)
V
(BR)EBO
I
CBO
I
CBO
V
CE(sat) (2)
Electrical characteristics
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Collector-base cut-
off current
Test conditions
(1)
I
C
= 10 µA
I
C
= 10 mA
I
E
= 10 µA
V
CB
= 45 V
Min.
60
60
6
Typ.
-
-
-
-
-
-
30
100
175
250
-
500
550
650
800
3
-
High frequency
current Gain 2
Output capacitance
Input capacitance
V
CE
= 5 V, I
C
= 500 µA, f = 30 MHz
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1 MHz
150
3.5
2
-
-
-
-
-
6
6
900
24
40
kΩ
µΩ
pF
pF
10
10
0.35
Max.
Unit
V
V
V
nA
nA
V
Emitter-base cut-off
V
EB
= 5 V
current
Collector-emitter
saturation voltage
I
C
= 1 mA, I
B
= 0.1 mA
I
C
= 1 µA, V
CE
= 5 V
I
C
= 10 µA, V
CE
= 5 V
h
FE (2)
DC forward current
transfer ratio
I
C
= 100 µA, V
CE
= 5 V
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
High frequency
current Gain 1
h
fe
V
CE
= 5 V, I
C
= 50 µA, f = 5 MHz
C
obo
C
ibo
h
FE
h
ie
h
oc
Small signal current
I
C
= 1 mA, V
CE
= 5 V, f = 1 kHz
gain
Small signal input
impedance
Small signal output
impedance
Small signal
reverse voltage
transfer ratio
Wide-Band noise
I
C
= 1 mA, V
CE
= 5 V, f = 1 kHz
I
C
= 1 mA, V
CE
= 5 V, f = 1 kHz
h
re
N
FW
I
C
= 1 mA, V
CE
= 5 V, f = 1 kHz
V
CE
= 5 V, I
C
= 10 µA, R
S
= 10 kΩ
-
-
800
3
10
-6
dB
4/14
DocID17734 Rev 2
2N2484HR
Table 5.
Symbol
Electrical characteristics
Electrical characteristics (continued)
Parameter
Test conditions
(1)
V
CE
= 5 V, I
C
= 10 µA
R
S
= 10 kΩ, f = 100 Hz
Power BW = 200 Hz
Spot noise figure
V
CE
= 5 V, I
C
= 10 µA
R
S
= 10 kΩ, f = 1 kHz
Power BW = 20 Hz
V
CE
= 5 V, I
C
= 10 µA
R
S
= 10 kΩ, f = 10 kHz
Power BW = 2 Hz
Min.
Typ.
Max.
Unit
NF
N1
-
-
3
NF
N2
-
-
10
dB
NF
N3
-
-
2
1. Measurement performed on a sample basis, LTPD 7 or less.
2. Pulse measurement: Pulse width
≤
300 µs, duty cycle
≤
1.0 %
Table 6.
Symbol
I
CBO
h
FE2
Electrical characteristics at high and low temperatures
Parameter
Collector-base cut-
off current
DC forward current
transfer ratio
Test conditions
V
CB
= 45 V, T
amb
= 150 °C
I
C
= 10 µA, V
CE
= 5 V
T
amb
= - 55 °C
20
Min.
Typ.
-
-
Max.
10
Unit
µA
DocID17734 Rev 2
5/14
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