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RT100KP51

Description
Trans Voltage Suppressor Diode, 100000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size139KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

RT100KP51 Overview

Trans Voltage Suppressor Diode, 100000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

RT100KP51 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage69.3 V
Minimum breakdown voltage56.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation100000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RT100KP33A thru RT100KP400CA, e3
SCOTTSDALE DIVISION
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS
PROTECTION
APPEARANCE
WWW .
Microsemi
.C
OM
DESCRIPTION
Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed
for aircraft applications requiring high power transient protection with a
comparatively small axial-leaded package size. This includes various
threats such as “Waveform 4” at 6.4/69 µs per
RTCA/DO-160E
Section 22.
It is also available with screening in accordance with MIL-PRF-19500 or
avionics screening as described in the Features section herein. It may also
be optionally acquired with RoHS Compliant (annealed matte-Tin finish)
with an e3 suffix added to the part number. Microsemi also offers a broad
spectrum of other TVSs to meet your needs.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with C or CA suffix)
TVS selection for 33 to 400 V Standoff Voltages (V
WM
)
Suppresses transients up to
100 kW @ 6.4/69
μs
Fast response with less than 5 ns turn-on time.
Optional 100%
screening for avionics grade
is available
by adding
MA
prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (V
BR
and I
D
)
Options for
screening
in accordance with MIL-PRF-19500
for JAN, JANTX,
and
JANTXV
are also available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B.
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protection from high power switching transients,
induced RF, and lightning threats with comparatively
small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and
IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 4 (6.4/69 µs) on all devices
Pin injection protection per RTCA/DO-160E up to
Level 5 for Waveform 4 (6.4/69 µs) on device types
RT100KP33A or CA up to RT100KP260A or CA
Pin injection protection per RTCA/DO-160E up to
Level 3 for Waveform 5A (40/120 µs) on all devices
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 5A (40/120 µs) on device types
RT100KP33 A or CA up to RT100KP64A or CA
Consult Factory for other voltages with similar Peak
Pulse Power capabilities.
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs
waveform in Figure 8 (also see figures 1 and 2)
Impulse repetition rate: 0.005
t
clamping
(0 volts to V
BR
min): <100 ps theoretical for
unidirectional and <5 ns for bidirectional
o
o
Operating & storage temperatures: -55 C to +150 C
Thermal resistance: 17.5C/W junction to lead, or 77.5C/W
junction to ambient when mounted on FR4 PC board with 4
mm
2
copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ T
L
= 27.5
o
C or
1.61 Watts at TA =25
o
C when mounted on FR4 PC Board
described for thermal resistance above
Forward surge: 250 Amps 8.3 ms half-sine wave for
unidirectional devices only
Solder Temperatures: 260
o
C for 10 s maximum
MECHANICAL & PACKAGING
CASE: Void free transfer molded thermosetting
epoxy meeting UL94V-O requirements
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
Polarity: Cathode marked with band for
unidirectional (no band required for bi-directional)
MARKING: Manufacturers logo and part number.
Add prefix MA, MQ, MX, etc., for screened parts.
WEIGHT: 1.7 grams (approximate)
TAPE & REEL option: Standard per EIA-296 for
axial package (add “TR” suffix to part number)
Package dimensions: See last page
RT100KP33 – 400CA, e3
Copyright
©
2007
8-22-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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