NX8562LB datasheet, PDF - EEWORLD Datasheet

NX8562LB: DescriptionLASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-BF; CategoryLED optoelectronic/LED photoelectric; File Size173KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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NX8562LB Overview

LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-BF

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Reach Compliance Code	unknown
Maximum forward current	0.3 A
Maximum forward voltage	1.5 V
Installation features	SURFACE MOUNT
Maximum operating temperature	65 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	LASER DIODE
peak wavelength	1561 nm
Semiconductor material	InGaAs
surface mount	YES

	NX8562LB	NX8562LB-BA	NX8562LB-CA
Description	LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-BF	LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-FC	LASER DIODE W/MONITOR,1.561UM PEAK WAVELENGTH,MODULE-SC
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	unknown	unknown	unknown
Maximum forward current	0.3 A	0.3 A	0.3 A
Maximum forward voltage	1.5 V	1.5 V	1.5 V
Installation features	SURFACE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Maximum operating temperature	65 °C	65 °C	65 °C
Minimum operating temperature	-40 °C	-40 °C	-20 °C
Optoelectronic device types	LASER DIODE	LASER DIODE	LASER DIODE
peak wavelength	1561 nm	1561 nm	1561 nm
Semiconductor material	InGaAs	InGaAs	InGaAs
surface mount	YES	NO	NO

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