2SC3596E datasheet, PDF - EEWORLD Datasheet

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2SC3596E: DescriptionSi, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size117KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC3596E Overview

Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN

2SC3596E Parametric

Parameter Name	Attribute value
Objectid	1481081354
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
YTEOL	0
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz

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2SC3596E Related Products

	2SC3596E	2SA1402C	2SA1402D	2SA1402E	2SA1402F	2SC3596D	2SC3596F	2SC3596C
Description	Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, PNP, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, PNP, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, PNP, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, PNP, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN	Si, NPN, RF POWER TRANSISTOR, TO-126, TO-126, 3 PIN
Parts packaging code	SIP	SIP	SIP	SIP	SIP	SIP	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-126, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-126, 3 PIN
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknow	unknow	unknow	unknown	unknown	unknow	unknow
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	40	60	100	160	60	160	40
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	140 °C	140 °C	140 °C	140 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W	1.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	700 MHz	700 MHz	700 MHz	700 MHz	700 MHz	700 MHz	700 MHz	700 MHz
Base Number Matches	-	1	1	1	-	-	1	1

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