NNCD3.3B datasheet, PDF - EEWORLD Datasheet

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NNCD3.3B: DescriptionTrans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size44KB，8 Pages; ManufacturerNEC Electronics

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NNCD3.3B Overview

Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35

NNCD3.3B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
package instruction	O-XALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	3.53 V
Minimum breakdown voltage	3.16 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-XALF-W2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	100 W
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
surface mount	NO
technology	AVALANCHE
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD3.3B to NNCD12B

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(500 mW TYPE)

This product series is a diode developed for E.S.D (Electrostatic

Discharge) noise protection. Based on the IEC1000-4-2 test on

electromagnetic interference (EMI), the diode assures an endur-

ance of no less than 30 kV.

Type NNCD2.0B to NNCD12B Series is into DO-35 Package with

DHD (Double Heatsink Diode) construction having allowable

power dissipation of 500 mW.

0.5

25 MIN.

Cathode

indication

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Based on the electrostatic discharge immunity test (IEC1000-4-

2), the product assures the minimum endurance of 30 kV.

• Based on the reference supply of the set, the product achieves

a series over a wide range (15 product name lined up).

• DHD (Double Heatsink Diode) construction.

2.0 MAX.

APPLICATIONS

• Circuit E.S.D protection.

• Circuits for Waveform clipper, Surge absorber.

MAXIMUM RATINGS (T

= 25

Power Dissipation

Surge Reverse Power

Junction Temperature

Storage Temperature

RSM

stg

500 mW

100 W (t

= 10

s 1 pulse)

175

°C

–65

°C

to +175

°C

Fig. 7

Document No. D11770EJ2V0DS00 (2nd edition)

Date Published December 1996 N

Printed in Japan

25 MIN.

4.2 MAX.

1996

NNCD3.3B Related Products

	NNCD3.3B	NNCD5.6B	NNCD5.1B	NNCD3.6B	NNCD6.8B
Description	Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35	Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35	Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35	Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35	Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, DO-35
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum breakdown voltage	3.53 V	5.88 V	5.35 V	3.83 V	6.97 V
Minimum breakdown voltage	3.16 V	5.29 V	4.85 V	3.47 V	6.32 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
JESD-609 code	e0	e0	e0	e0	e0
Maximum non-repetitive peak reverse power dissipation	100 W	100 W	100 W	100 W	100 W
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	NEC Electronics	-	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	O-XALF-W2	O-XALF-W2	O-XALF-W2	-	-

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