STQ1006 datasheet, PDF - EEWORLD Datasheet

STQ1006: DescriptionPower Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size25KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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STQ1006 Overview

Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	Microsemi
package instruction	IN-LINE, R-CDIP-T14
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.4 A
Maximum drain-source on-resistance	4.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CDIP-T14
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Transistor component materials	SILICON

	STQ1006	STQ1004
Description	Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Microsemi	Microsemi
package instruction	IN-LINE, R-CDIP-T14	IN-LINE, R-CDIP-T14
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	90 V	60 V
Maximum drain current (ID)	0.4 A	0.46 A
Maximum drain-source on-resistance	4.5 Ω	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CDIP-T14	R-CDIP-T14
Number of components	4	4
Number of terminals	14	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON

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