Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | Microsemi |
Objectid | 1689298820 |
Parts packaging code | DIP |
package instruction | IN-LINE, R-CDIP-T14 |
Contacts | 14 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
compound_id | 5337897 |
Configuration | SEPARATE, 4 ELEMENTS |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 0.46 A |
Maximum drain-source on-resistance | 3.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CDIP-T14 |
Number of components | 4 |
Number of terminals | 14 |
Operating mode | ENHANCEMENT MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | DUAL |
Transistor component materials | SILICON |
STQ1004 | STQ1006 | |
---|---|---|
Description | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 0.4A I(D), 90V, 4.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
Maker | Microsemi | Microsemi |
package instruction | IN-LINE, R-CDIP-T14 | IN-LINE, R-CDIP-T14 |
Reach Compliance Code | unknown | compliant |
ECCN code | EAR99 | EAR99 |
Configuration | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS |
Minimum drain-source breakdown voltage | 60 V | 90 V |
Maximum drain current (ID) | 0.46 A | 0.4 A |
Maximum drain-source on-resistance | 3.5 Ω | 4.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-CDIP-T14 | R-CDIP-T14 |
Number of components | 4 | 4 |
Number of terminals | 14 | 14 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | DUAL | DUAL |
Transistor component materials | SILICON | SILICON |