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2SB775E

Description
6A, 85V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size80KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SB775E Overview

6A, 85V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN

2SB775E Parametric

Parameter NameAttribute value
Objectid1483103829
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
YTEOL0
Other featuresBUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)6 A
Collector-emitter maximum voltage85 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)18 MHz

2SB775E Related Products

2SB775E 2SD895D 2SD895-D 2SD895-E 2SD895E 2SB775-D 2SB775D 2SB775-E
Description 6A, 85V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN 6A, 85V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN 6A, 85V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN 6A, 85V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN 6A, 85V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PB, 3 PIN 6A, 85V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN 6A, 85V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-3PB, 3 PIN
Parts packaging code TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 PLASTIC, TO-3PB, 3 PIN PLASTIC, TO-3PB, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknow unknown unknown unknow unknow unknown unknown
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 85 V 85 V 85 V 85 V 85 V 85 V 85 V 85 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 60 100 100 60 60 100
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 140 °C 150 °C 150 °C 150 °C 150 °C 140 °C 140 °C 140 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN NPN NPN NPN PNP PNP PNP
Maximum power dissipation(Abs) 60 W 60 W 60 W 60 W 60 W 60 W 60 W 60 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 18 MHz 15 MHz 15 MHz 15 MHz 15 MHz 18 MHz 18 MHz 18 MHz
Objectid 1483103829 - 1483104499 1483104504 - - 1483103826 1483103829
Other features BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE - BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE

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