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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB766AS-C
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2SB766AS-C

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size243KB，2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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2SB766AS-C Overview

Transistor

2SB766AS-C Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1

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2SB766A
Elektronische Bauelemente
PNP
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Large collector power dissipation P
C
Complementary to 2SD874A
Collector
M
E
B
SOT-89
A
C
D

PACKAGE INFORMATION
Weight: 0.05 g (approximately)

Emitter
I
H
G
F
Base
J
K

L
REF.
MARKING
B
= hFE ranking
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-5
-1
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
OB
Min.
-60
-50
-5
-
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-0.2
-0.85
200
20
Max.
-
-
-
-0.1
-0.1
340
-
-0.4
-1.2
-
30
Unit
V
V
V
A
A
Test Conditions
I
C
=-10A, I
E
=0
I
C
= -2mA, I
B
=0
I
E
=-10A, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4 V, I
C
=0
V
CE
=-10V, I
C
= -500mA
V
CE
=-5V, I
C
= -1000mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
=-10V, I
C
=-50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
V
V
MHz
pF
CLASSIFICATION OF hFE2
Rank
Range
Marking
Q
85 - 170
BQ
R
120 - 240
BR
S
170 - 340
BS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2006 Rev. A
Page 1 of 2

2SB766AS-C Related Products

2SB766AS-C 2SB766AQ 2SB766AQ-C 2SB766AR 2SB766AS
Description Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code compli compli compli compli compli
Base Number Matches 1 1 1 1 1

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