2SB766AR datasheet, PDF - EEWORLD Datasheet

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2SB766AR: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size243KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SB766AR Overview

Transistor

2SB766AR Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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2SB766A

Elektronische Bauelemente

PNP

Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Large collector power dissipation P

C



Complementary to 2SD874A

Collector

M

E

B

SOT-89

A

C

D



PACKAGE INFORMATION

Weight: 0.05 g (approximately)



Emitter

I

H

G

F

Base

J

K



L

REF.

MARKING

B



= hFE ranking

A

B

C

D

E

F

Millimeter

Min.

Max.

4.40

4.60

4.05

4.25

1.50

1.70

1.30

1.50

2.40

2.60

0.89

1.20

REF.

G

H

I

J

K

L

M

Millimeter

Min.

Max.

3.00 REF.

1.50 REF.

0.40

0.52

1.40

1.60

0.35

0.41

5° TYP.

0.70 REF.

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction & Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

-60

-50

-5

-1

0.5

150, -55~150

Unit

V

A

W

°C

PNP ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

f

T

C

OB

Min.

-60

-50

-5

-

85

50

-

Typ.

-

-0.2

-0.85

200

20

Max.

-

-0.1

340

-

-0.4

-1.2

-

30

Unit

V

A

Test Conditions

I

C

=-10A, I

E

=0

I

C

= -2mA, I

B

=0

I

E

=-10A, I

C

=0

V

CB

=-20V, I

E

=0

V

EB

=-4 V, I

C

=0

V

CE

=-10V, I

C

= -500mA

V

CE

=-5V, I

C

= -1000mA

I

C

=-500mA, I

B

= -50mA

I

C

=-500mA, I

B

= -50mA

V

CE

=-10V, I

C

=-50mA, f=200MHz

V

CB

=-10V, I

E

=0, f=1MHz

V

MHz

pF

CLASSIFICATION OF hFE2

Rank

Range

Marking

Q

85 - 170

BQ

R

120 - 240

BR

S

170 - 340

BS

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2006 Rev. A

Page 1 of 2

2SB766AR Related Products

	2SB766AR	2SB766AQ	2SB766AQ-C	2SB766AS	2SB766AS-C
Description	Transistor	Transistor	Transistor	Transistor	Transistor
Reach Compliance Code	compli	compli	compli	compli	compli
Base Number Matches	1	1	1	1	1

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