2SB1565E datasheet, PDF - EEWORLD Datasheet

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2SB1565E: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SB1565E Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN

2SB1565E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220FN
package instruction	TO-220FN, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz
Base Number Matches	1

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2SB1565

Transistors

Power Transistor (−60V,

−3A)

2SB1565

!

Features

1) Low V

CE(sat)

. (Typ.−0.3V at I

C

/I

B

=

−2/−0.2A)

2) Excellent DC current gain characteristics.

3) Wide SOA (safe operating area).

!External

dimensions

(Units : mm)

10.0

4.5

φ

3.2

2.8

15.0

12.0

8.0

5.0

1.2

14.0

1.3

0.8

2.54

(1) (2) (3)

0.75

2.6

(1) Base(Gate)

(2) Collector(Drain)

(3) Emitter(Source)

ROHM : TO-220FN

!

Absolute maximum ratings

(Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits

−80

−60

−7

−3

−6

2

25

150

−55~+150

Unit

V

A (DC)

A (Pulse)

W

W (Tc = 25°C)

°C

*

Single pulse Pw = 100ms

!

Packaging specifications and h

FE

Type

Package

h

FE

Code

Basic ordering unit (pieces)

2SB1565

TO-220FN

EF

−

500

!

Electrical characteristics

(Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

Min.

−80

−60

−7

−

100

−

Typ.

−

15

50

Max.

−

−10

−1.5

320

−

Unit

V

µA

V

−

MHz

pF

I

C

=

−50µA

I

C

=

−1mA

I

E

=

−50µA

V

CB

=

−60V

V

EB

=

−7V

I

C

/I

B

=

−2A/−0.2A

I

C

/I

B

=

−2A/−0.2A

V

CE

/I

C

=

−5V/−0.5A

V

CE

=

−5V

, I

E

= 0.5A , f = 5MHz

V

CB

=

−10V

, I

E

= 0A , f = 1MHz

Conditions

*

Measured using pulse current.

2SB1565E Related Products

	2SB1565E	2SB1565/F	2SB1565/E
Description	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN	3A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FN, TO-220FN, 3 PIN	3A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FN, TO-220FN, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-220FN	TO-220FN	TO-220FN
package instruction	TO-220FN, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	compli	unknow	unknow
Shell connection	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	160	100
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz	15 MHz
Base Number Matches	1	1	1
Maximum operating temperature	-	150 °C	150 °C
Maximum power consumption environment	-	25 W	25 W
Terminal surface	-	NOT SPECIFIED	NOT SPECIFIED
VCEsat-Max	-	1 V	1 V

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