IP4359CX4
Dual channel low capacitance high performance ESD
protection
Rev. 1 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
The IP4359CX4 is a dual channel low capacitance ElectroStatic Discharge (ESD)
protection device, providing protection to downstream components from ESD voltages as
high as
±15
kV contact discharge and >
±15
kV air discharge according the
IEC 61000-4-2 model, far exceeding standard level 4.
The device is optimized for protection of high speed interfaces such as Universal Serial
Bus (USB) 2.0, High Definition Multimedia Interface (HDMI), Digital Visual Interface (DVI)
and other interfaces requiring very low capacitance ESD protection.
The device is available in two different heights. 0.61 mm and reduced maximum height of
0.5 mm. Both versions contain identical circuits and show an identical electrical
performance. Both ESD protection channels share common ground connections, but are
electrically separated, thereby preventing current back drive into the adjacent channel.
IP4359CX4 is fabricated using monolithic silicon technology in a single Wafer-Level
Chip-Scale Package (WLCSP). These features make the IP4359CX4 ideal for use in
applications requiring component miniaturization such as mobile phone handsets and
other portable electronic devices.
1.2 Features and benefits
Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
2 ultra low input capacity rail-to-rail ESD protection diodes with C
(I/O-GND)
= 1.3 pF
R
dyn
= 0.45
Ω
Integrated ESD protection withstanding
±15
kV contact discharge and >
±15
kV air
discharge, far exceeding IEC 61000-4-2 level 4
Standard height version (0.61 mm) available as IP4359CX4/LF
Reduced height version (maximum height of 0.5 mm) available as
IP4359CX4/LF-H500
2
×
2 solder ball WLCSP with 0.4 mm pitch
1.3 Applications
High-speed interface ESD protection such as USB 2.0, HDMI, DVI etc.
Interfaces with special requirements on low capacitive ESD protection
Interfaces requiring separation of the positive clamping voltage/current path
NXP Semiconductors
IP4359CX4
Dual channel low capacitance ESD protection
2. Pinning information
Table 1.
Pin
A1 and A2
B1 and B2
Pinning
Description
ESD protection
ground
bump A1
index area
1
2
A1
A2
Simplified outline
Graphic symbol
A
B1
B2
008aaa239
B
008aaa236
transparent top view,
solder balls facing down
3. Ordering information
Table 2.
Ordering information
Package height
standard
[1]
reduced
[2]
Package
Name
IP4359CX4/LF
IP4359CX4/LF-H500
[1]
[2]
For details see
Table 5.
For details see
Table 6.
Type number
Description
wafer level chip-size package; 4 bumps (2
×
2)
wafer level chip-size package; 4 bumps (2
×
2)
Version
IP4359CX4
IP4359CX4
WLCSP4
WLCSP4
IP4359CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 6 August 2010
2 of 12
NXP Semiconductors
IP4359CX4
Dual channel low capacitance ESD protection
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
I
V
ESD
Parameter
input voltage
electrostatic discharge
voltage
Conditions
pins A1 and A2 to ground (B1, B2)
pins A1 and A2 to ground (B1, B2)
contact discharge
air discharge
IEC 61000-4-2 level 4;
pins A1 and A2 to ground (B1, B2)
contact discharge
air discharge
T
stg
T
amb
[1]
[1]
[1]
Min Max
−0.5
+5.5
−15
−20
+15
+20
Unit
V
kV
kV
−8
−15
−55
-
−35
+8
+15
260
+85
kV
kV
°C
°C
storage temperature
ambient temperature
+150
°C
T
reflow(peak)
peak reflow temperature 10 s maximum
Device is qualified with 1000 pulses of
±15
kV contact discharges each, according to the IEC61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
5. Characteristics
Table 4.
Electrical characteristics
T
amb
= 25
°
C; unless otherwise specified.
Symbol
C
(I/O-GND)
I
LR
V
BRzd
V
F
R
dyn
Parameter
input/output to ground
capacitance
Conditions
pins A1 and A2 to ground (B1,
B2); V
I
= 3.3 V; f = 1 MHz
[1]
Min
-
-
6
-
Typ Max
1.3
-
-
0.7
1.5
100
9
-
Unit
pF
nA
V
V
Ω
Ω
reverse leakage current pins A1 and A2 to ground (B1,
B2); V
I
= 3.3 V
Zener diode breakdown I
test
= 1 mA
voltage
forward voltage
dynamic resistance
I
test
= 1 A; IEC 61000-4-5
positive discharge
negative discharge
-
-
0.45 -
0.45 -
[1]
Guaranteed by design.
IP4359CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 6 August 2010
3 of 12
NXP Semiconductors
IP4359CX4
Dual channel low capacitance ESD protection
6. Application information
6.1 Insertion loss
The IP4359CX4 is mainly designed as an ESD protection device for high speed interfaces
such as USB 2.0, DVI and HDMI high speed data lines etc. The insertion loss
measurement configuration of a typical 50
Ω
NetWork Analyzer (NWA) system for
evaluation of the IP4359CX4 is shown in
Figure 1.
The insertion loss of IP4359CX4 is depicted in
Figure 2.
IN
50
Ω
DUT
OUT
50
Ω
TEST BOARD
Vgen
001aai755
Fig 1.
Frequency response measurement configuration
5
s
21
(dB)
−5
008aaa237
−15
−25
−35
10
−1
1
10
10
2
10
3
f (MHz)
10
4
Pin A1 and pin A2 to ground.
Fig 2.
Measured insertion loss magnitude
IP4359CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 6 August 2010
4 of 12
NXP Semiconductors
IP4359CX4
Dual channel low capacitance ESD protection
6.2 Crosstalk
The crosstalk measurement configuration of a typical 50
Ω
NWA system for evaluation of
the IP4359CX4 is shown in
Figure 3.
The crosstalk measurement results of IP4359CX4 are depicted in
Figure 4.
IN_1
50
Ω
DUT
OUT_2
OUT_1
50
Ω
50
Ω
IN_2
50
Ω
TEST BOARD
Vgen
001aai756
Fig 3.
Crosstalk measurement configuration
0
α
ct
(dB)
−20
008aaa238
−40
−60
−80
−100
1
10
10
2
10
3
f (MHz)
10
4
Pin A1 to pin A2.
Fig 4.
Measured crosstalk between different channels
IP4359CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 6 August 2010
5 of 12
京公网安备 11010802033920号
EEWORLD
