EEWORLDEEWORLDEEWORLD

Part Number

Search

HA8050E

Description
Small Signal Bipolar Transistor, 1.5A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,5 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HA8050E Overview

Small Signal Bipolar Transistor, 1.5A I(C), NPN

HA8050E Parametric

Parameter NameAttribute value
MakerHSMC
Reach Compliance Codeunknown
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)250
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountNO
Nominal transition frequency (fT)100 MHz
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6107
Issued Date : 1998.09.05
Revised Date : 2004.11.29
Page No. : 1/5
HA8050
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA8050 is designed for use in 2W output amplifier of portable radios in class B
push-pull operation.
Features
High total power dissipation (P
T
: 2W, T
C
=25°C)
High collector current (I
C
: 1.5A)
Complementary to HA8550
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................ +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)................................................................................................... 1 W
Total Power Dissipation (T
C
=25°C)................................................................................................... 2 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage........................................................................................................ 40 V
V
CEO
Collector to Emitter Voltage..................................................................................................... 25 V
V
EBO
Emitter to Base Voltage............................................................................................................. 6 V
I
C
Collector Current ......................................................................................................................... 1.5 A
I
B
Base Current ........................................................................................................................... 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE1
*h
FE2
*h
FE3
f
T
Min.
40
25
6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
I
C
=100uA
I
C
=2mA
I
E
=100uA
V
CB
=35V
V
EB
=6V
I
C
=0.8A, I
B
=80mA
I
C
=0.8A, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification on h
FE2
Rank
Range
HA8050
B
85-160
C
120-200
D
160-300
E
250-500
HSMC Product Specification

HA8050E Related Products

HA8050E HA8050D HA8050C HA8050B
Description Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN
Maker HSMC HSMC HSMC HSMC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 1.5 A - 1.5 A 1.5 A
Configuration Single - Single Single
Minimum DC current gain (hFE) 250 - 120 85
Maximum operating temperature 150 °C - 150 °C 150 °C
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 2 W - 2 W 2 W
surface mount NO - NO NO
Nominal transition frequency (fT) 100 MHz - 100 MHz 100 MHz
Assembly language learning PPT tutorial
Two file packages...
1234 Embedded System
PT100 temperature measurement circuit
[color=#252525][size=4]PT100 temperature measurement circuit[/size][/color] [color=#252525][size=4][/size][/color]...
Jacktang Analogue and Mixed Signal
Battery Pack BMS Coulomb Counter Chip Solution
ADI-Maxim's battery pack BMS coulomb meter chip is relatively expensive, and most companies will not use it. Can anyone recommend a domestic chip? Taiwan, Japan, and Korea are also OK. In the past, co...
QWE4562009 DIY/Open Source Hardware
Application of FRAM in automobile driving recorder 2
3) FRAM storage methodSince FRAM has the speed and times of SRAM, and the characteristics of Flash and EEPROM, data can be saved after power failure, and the multifunctional FRAM also has power manage...
frozenviolet Automotive Electronics
Principle and application of diaphragm pressure gauge
In daily industrial production, various pressure gauges are indispensable as a common measuring instrument. There are many types of pressure gauges, including pointer indication type and digital displ...
cfybhd Sensor
EEWORLD University - How to draw a high-end PCB ruler with Altium20
How to draw a high-end PCB ruler using Altium20 : https://training.eeworld.com.cn/course/5965How to draw a high-end PCB ruler using Altium20PCB ruler is a practical tool that many engineers need to us...
F凡亿教育 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号