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HA8050D

Description
Small Signal Bipolar Transistor, 1.5A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,5 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HA8050D Overview

Small Signal Bipolar Transistor, 1.5A I(C), NPN

HA8050D Parametric

Parameter NameAttribute value
MakerHSMC
Reach Compliance Codeunknown
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6107
Issued Date : 1998.09.05
Revised Date : 2004.11.29
Page No. : 1/5
HA8050
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA8050 is designed for use in 2W output amplifier of portable radios in class B
push-pull operation.
Features
High total power dissipation (P
T
: 2W, T
C
=25°C)
High collector current (I
C
: 1.5A)
Complementary to HA8550
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................ +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)................................................................................................... 1 W
Total Power Dissipation (T
C
=25°C)................................................................................................... 2 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage........................................................................................................ 40 V
V
CEO
Collector to Emitter Voltage..................................................................................................... 25 V
V
EBO
Emitter to Base Voltage............................................................................................................. 6 V
I
C
Collector Current ......................................................................................................................... 1.5 A
I
B
Base Current ........................................................................................................................... 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE1
*h
FE2
*h
FE3
f
T
Min.
40
25
6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
I
C
=100uA
I
C
=2mA
I
E
=100uA
V
CB
=35V
V
EB
=6V
I
C
=0.8A, I
B
=80mA
I
C
=0.8A, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification on h
FE2
Rank
Range
HA8050
B
85-160
C
120-200
D
160-300
E
250-500
HSMC Product Specification

HA8050D Related Products

HA8050D HA8050E HA8050C HA8050B
Description Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN Small Signal Bipolar Transistor, 1.5A I(C), NPN
Maker HSMC HSMC HSMC HSMC
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) - 1.5 A 1.5 A 1.5 A
Configuration - Single Single Single
Minimum DC current gain (hFE) - 250 120 85
Maximum operating temperature - 150 °C 150 °C 150 °C
Polarity/channel type - NPN NPN NPN
Maximum power dissipation(Abs) - 2 W 2 W 2 W
surface mount - NO NO NO
Nominal transition frequency (fT) - 100 MHz 100 MHz 100 MHz
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