SMDA24-7-G datasheet, PDF - EEWORLD Datasheet

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SMDA24-7-G: DescriptionTrans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8; CategoryDiscrete semiconductor diode; File Size114KB，3 Pages; ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.; Environmental Compliance

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SMDA24-7-G Overview

Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8

SMDA24-7-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction	R-PDSO-G8
Reach Compliance Code	unknown
Minimum breakdown voltage	26.7 V
Shell connection	ISOLATED
Configuration	COMMON BIPOLAR TERMINAL, 7 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G8
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	300 W
Number of components	7
Number of terminals	8
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	24 V
surface mount	YES
technology	AVALANCHE
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

SMDA24-7-G Related Products

	SMDA24-7-G	SMDA15-7-G	SMDA03-7-G	SMDA05-7-G	SMDA12-7-G
Description	Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8	Trans Voltage Suppressor Diode, 300W, 15V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8	Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8	Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8	Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
Minimum breakdown voltage	26.7 V	16.7 V	4 V	6 V	13.3 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	COMMON BIPOLAR TERMINAL, 7 ELEMENTS	COMMON BIPOLAR TERMINAL, 7 ELEMENTS	COMMON BIPOLAR TERMINAL, 7 ELEMENTS	COMMON BIPOLAR TERMINAL, 7 ELEMENTS	COMMON BIPOLAR TERMINAL, 7 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Humidity sensitivity level	1	1	1	1	1
Maximum non-repetitive peak reverse power dissipation	300 W	300 W	300 W	300 W	300 W
Number of components	7	7	7	7	7
Number of terminals	8	8	8	8	8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	UNI	UNI
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	24 V	15 V	3.3 V	5 V	12 V
surface mount	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Sangdest Microelectronics (Nanjing) Co., Ltd.	-	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.	Sangdest Microelectronics (Nanjing) Co., Ltd.

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