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SMDA12-7-G

Description
Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8
CategoryDiscrete semiconductor    diode   
File Size114KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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SMDA12-7-G Overview

Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8

SMDA12-7-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-G8
Reach Compliance Codeunknow
Minimum breakdown voltage13.3 V
Shell connectionISOLATED
ConfigurationCOMMON BIPOLAR TERMINAL, 7 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation300 W
Number of components7
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNI
Certification statusNot Qualified
Maximum repetitive peak reverse voltage12 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SMDA12-7-G Related Products

SMDA12-7-G SMDA15-7-G SMDA03-7-G SMDA24-7-G SMDA05-7-G
Description Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8 Trans Voltage Suppressor Diode, 300W, 15V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8 Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8 Trans Voltage Suppressor Diode, 300W, 24V V(RWM), Bidirectional, 7 Element, Silicon, LEAD FREE, SO-8 Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Uni, 7 Element, Silicon, LEAD FREE, SO-8
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Reach Compliance Code unknow unknown unknown unknown unknown
Minimum breakdown voltage 13.3 V 16.7 V 4 V 26.7 V 6 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS COMMON BIPOLAR TERMINAL, 7 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Humidity sensitivity level 1 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 300 W 300 W 300 W 300 W 300 W
Number of components 7 7 7 7 7
Number of terminals 8 8 8 8 8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
polarity UNI BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL UNI
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 12 V 15 V 3.3 V 24 V 5 V
surface mount YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. - Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
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