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SXVVP0535N2

Description
Small Signal Field-Effect Transistor, 0.2A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size123KB,4 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

SXVVP0535N2 Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SXVVP0535N2 Parametric

Parameter NameAttribute value
MakerSupertex
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance75 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Maximum power consumption environment3.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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