CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: Current is limited by the package capability.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 50V,
I
D
= 12A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.068
-
-
-
-
-
30
10
9
48
3
6.5
1380
380
20
-
MAX
-
5.5
4.5
-
25
250
100
200
0.972
0.080
0.129
20
50
35
30
35
13
12
-
-
-
-
-
-
5.0
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 12A
I
D
= 8A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 50V, I
D
= 12A,
R
L
= 4.17Ω, V
GS
= 12V,
R
GS
= 7.5Ω
2
FSGL130R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 8A
MIN
100
2.0
-
-
-
-
MAX
-
4.5
100
25
0.972
0.080
UNITS
V
V
nA
µA
V
Ω
TEST CONDITIONS
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
0.68
MAX
1.5
160
-
UNITS
V
ns
µC
Electrical Specifications up to 100 krad
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL
RANGE (µ)
36
32
32
28
28
APPLIED
V
GS
BIAS
(V)
-10
-5
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS (V)
100
100
50
80
50
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
120
100
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
120
100
80
LET = 37
V
DS
(V)
V
DS
(V)
80
60
40
20
0
0
-2
-4
-6
V
GS
(V)
-8
-10
-12
60
40
20
LET = 60
0
0
4
8
12
16
20
24
28
32
NEGATIVE V
GS
BIAS (V)
LET = 82
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSGL130R
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
14
12
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
I
D
, DRAIN (A)
10
8
6
4
2
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
200
100
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
10
100µs
1ms
12V
Q
G
Q
GS
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
V
G
Q
GD
0.10
1
10
100
300
CHARGE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 8A
NORMALIZED r
DS(ON)
2.0
I
D
, DRAIN TO SOURCE CURRENT (A)
100
V
GS
= 14V
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
80
1.5
60
1.0
40
0.5
20
V
GS
= 6 VOLTS
0.0
-80
0
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSGL130R
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
P
DM
t
1
0.1
t
2
10
1
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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