NDF10N62Z datasheet, PDF - EEWORLD Datasheet

NDF10N62Z: Description10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size127KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NDF10N62Z Overview

10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	620 V
Processing package description	ROHS COMPLIANT, CASE 221A-09, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	10 A
Rated avalanche energy	300 mJ
Maximum drain on-resistance	0.7500 ohm
Maximum leakage current pulse	36 A

	NDF10N62Z	NDP10N62ZG	NDP10N62Z
Description	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Shell connection	DRAIN	ISOLATED	DRAIN
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Minimum breakdown voltage	620 V	-	620 V
Processing package description	ROHS COMPLIANT, CASE 221A-09, 3 PIN	-	ROHS COMPLIANT, CASE 221A-09, 3 PIN
Lead-free	Yes	-	Yes
EU RoHS regulations	Yes	-	Yes
state	ACTIVE	-	ACTIVE
packaging shape	RECTANGULAR	-	RECTANGULAR
Package Size	FLANGE MOUNT	-	FLANGE MOUNT
terminal coating	MATTE TIN	-	MATTE TIN
Packaging Materials	PLASTIC/EPOXY	-	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Channel type	N-CHANNEL	-	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	-	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	-	GENERAL PURPOSE POWER
Maximum leakage current	10 A	-	10 A
Rated avalanche energy	300 mJ	-	300 mJ
Maximum drain on-resistance	0.7500 ohm	-	0.7500 ohm
Maximum leakage current pulse	36 A	-	36 A

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