NDP10N62ZG datasheet, PDF - EEWORLD Datasheet

NDP10N62ZG: Description10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size127KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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NDP10N62ZG Overview

10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	TO-220AB
package instruction	ROHS COMPLIANT, CASE 221D-03, TO-220FP, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 221D-03
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	300 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	620 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	NDP10N62ZG	NDF10N62Z	NDP10N62Z
Description	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	10 A, 620 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Shell connection	ISOLATED	DRAIN	DRAIN
Number of components	1	1	1
Number of terminals	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Minimum breakdown voltage	-	620 V	620 V
Processing package description	-	ROHS COMPLIANT, CASE 221A-09, 3 PIN	ROHS COMPLIANT, CASE 221A-09, 3 PIN
Lead-free	-	Yes	Yes
EU RoHS regulations	-	Yes	Yes
state	-	ACTIVE	ACTIVE
packaging shape	-	RECTANGULAR	RECTANGULAR
Package Size	-	FLANGE MOUNT	FLANGE MOUNT
terminal coating	-	MATTE TIN	MATTE TIN
Packaging Materials	-	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Channel type	-	N-CHANNEL	N-CHANNEL
field effect transistor technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	-	ENHANCEMENT	ENHANCEMENT
Transistor type	-	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	-	10 A	10 A
Rated avalanche energy	-	300 mJ	300 mJ
Maximum drain on-resistance	-	0.7500 ohm	0.7500 ohm
Maximum leakage current pulse	-	36 A	36 A

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