M63802KP datasheet, PDF - EEWORLD Datasheet

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M63802KP: DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2Z-A, 16 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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M63802KP Overview

Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2Z-A, 16 PIN

M63802KP Parametric

Parameter Name	Attribute value
Maker	POWEREX
package instruction	SMALL OUTLINE, R-PDSO-G16
Contacts	16
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 0.95
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	35 V
Configuration	SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G16
Number of components	7
Number of terminals	16
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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POWEREX

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63802P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY

PIN CONFIGURATION

IN1

→

IN2

→

IN3

→

INPUT

IN4→

IN5→

IN6

→

IN7→

→

DESCRIPTION

M63802P, M63802FP, M63802GP and M63802KP are

seven-circuit Singe transistor arrays. The circuits are made

of NPN transistors. Both the semiconductor integrated cir-

cuits perform high-current driving with extremely low input-

current supply.

OUTPUT

FEATURES

Four package configurations (P, FP, GP and KP)

Medium breakdown voltage (BV

CEO

≥

35V)

Synchronizing current (I

C(max)

= 300mA)

With zener diodes

Low output saturation voltage

Wide operating temperature range (Ta=–40 to +85°C)

GND

16P4(P)

16P2N-A(FP)

16P2S-A(GP)

Package type 16P2Z-A(KP)

NC : No connection

CIRCUIT DIAGRAM

OUTPUT

APPLICATION

Driving of digit drives of indication elements (LEDs and

lamps) with small signals

Vz=7V

INPUT

10.5k

10k

GND

The seven circuits share the GND.

FUNCTION

The M63802P, M63802FP, M63802GP and M63802KP each

have seven circuits consisting of NPN transistor. The transis-

tor emitters are all connected to the GND pin (pin 8).

The transistors allow synchronous flow of 300mA collector

current. A maximum of 35V voltage can be applied between

the collector and emitter.

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

Unit:

Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

CEO

Parameter

Collector-emitter voltage

Collector current

Input voltage

(Unless otherwise noted, Ta = –40 ~ +85

Conditions

Output, H

Current per circuit output, L

M63802P

Ratings

–0.5 ~ +35

300

–0.5 ~ +35

1.47

1.00

0.80

0.78

–40 ~ +85

–55 ~ +125

Unit

Power dissipation

Ta = 25°C, when mounted

on board

M63802FP

M63802GP

M63802KP

opr

stg

Operating temperature

Storage temperature

°C

Jan. 2000

M63802KP Related Products

	M63802KP	M63802FP	M63802GP	M63802P
Description	Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2Z-A, 16 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2N-A, 16 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2S-A, 16 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P4, 16 PIN
Maker	POWEREX	POWEREX	POWEREX	POWEREX
package instruction	SMALL OUTLINE, R-PDSO-G16	SMALL OUTLINE, R-PDSO-G16	SMALL OUTLINE, R-PDSO-G16	IN-LINE, R-PDIP-T16
Contacts	16	16	16	16
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 0.95	BUILT IN BIAS RESISTANCE RATIO IS 0.95	BUILT IN BIAS RESISTANCE RATIO IS 0.95	BUILT IN BIAS RESISTANCE RATIO IS 0.95
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A
Collector-emitter maximum voltage	35 V	35 V	35 V	35 V
Configuration	SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	50	50	50	50
JESD-30 code	R-PDSO-G16	R-PDSO-G16	R-PDSO-G16	R-PDIP-T16
Number of components	7	7	7	7
Number of terminals	16	16	16	16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	NO
Terminal form	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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