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M63802GP

Description
Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2S-A, 16 PIN
CategoryDiscrete semiconductor    The transistor   
File Size65KB,4 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric Compare View All

M63802GP Overview

Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2S-A, 16 PIN

M63802GP Parametric

Parameter NameAttribute value
MakerPOWEREX
package instructionSMALL OUTLINE, R-PDSO-G16
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.95
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage35 V
ConfigurationSEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G16
Number of components7
Number of terminals16
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1
1
IN2
2
IN3
3
INPUT
IN4→
4
IN5→
5
IN6
6
IN7→
7
16
O1
15
O2
14
O3
13
O4
12
O5
11
O6
10
O7
9
DESCRIPTION
M63802P, M63802FP, M63802GP and M63802KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
OUTPUT
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta=–40 to +85°C)
GND
8
NC
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
Package type 16P2Z-A(KP)
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
Vz=7V
INPUT
10.5k
10k
GND
The seven circuits share the GND.
FUNCTION
The M63802P, M63802FP, M63802GP and M63802KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8).
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied between
the collector and emitter.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
Parameter
Collector-emitter voltage
Collector current
Input voltage
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Conditions
Output, H
Current per circuit output, L
M63802P
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
P
d
Power dissipation
Ta = 25°C, when mounted
on board
M63802FP
M63802GP
M63802KP
W
T
opr
T
stg
Operating temperature
Storage temperature
°C
°C
Jan. 2000

M63802GP Related Products

M63802GP M63802KP M63802FP M63802P
Description Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2S-A, 16 PIN Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2Z-A, 16 PIN Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P2N-A, 16 PIN Small Signal Bipolar Transistor, 0.3A I(C), 35V V(BR)CEO, 7-Element, NPN, Silicon, 16P4, 16 PIN
Maker POWEREX POWEREX POWEREX POWEREX
package instruction SMALL OUTLINE, R-PDSO-G16 SMALL OUTLINE, R-PDSO-G16 SMALL OUTLINE, R-PDSO-G16 IN-LINE, R-PDIP-T16
Contacts 16 16 16 16
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 0.95 BUILT IN BIAS RESISTANCE RATIO IS 0.95 BUILT IN BIAS RESISTANCE RATIO IS 0.95 BUILT IN BIAS RESISTANCE RATIO IS 0.95
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage 35 V 35 V 35 V 35 V
Configuration SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PDSO-G16 R-PDSO-G16 R-PDSO-G16 R-PDIP-T16
Number of components 7 7 7 7
Number of terminals 16 16 16 16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES NO
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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