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JANS1N6119

Description
Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size109KB,2 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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JANS1N6119 Overview

Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

JANS1N6119 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMTECH
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage34.2 V
Breakdown voltage nominal value36 V
Shell connectionISOLATED
Maximum clamping voltage52 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation500 W
Number of components2
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)225
polarityBIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusQualified
GuidelineMIL-19500/516
Maximum repetitive peak reverse voltage27.4 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
QPL
500 Watt Axial Leaded TVS
1N6102A
1N6137A
Thru
TEL:805-498-2111 FAX:805-498-3804
DESCRIPTION
The 1N61xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using two p-n junction TVS diodes in a back-to-
back configuration, hermetically sealed in a voidless glass
package. The hermetically sealed package provides high
reliability in harsh environmental conditions. TVS diodes
are further characterized by their high surge capability, low
operating and clamping voltages, and a theoretically
instantaneous response time. This makes them ideal for
use as board level protection for sensitive semiconductor
components.
FEATURES:
500 Watts Peak Pulse Power (tp = 10/1000µs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Military & Industrial applications
Available in
JAN, JTX, JTXV
and
JANS
versions
per MIL-S-19500/516
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo
MAXIMUM RATINGS
RATING
Peak Pulse Power (tp = 10 x 1000µs)
Operating Temperature
Storage Temperature
Steady-State Power Dissipation @ TL = 75ºC (3/8”)
SYMBOL
Ppk
Tj
Tstg
PD
VALUE
500
-65 to +175
-65 to +175
3
UNIT
Watts
°C
°C
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
V
RWM
1N6102A
1N6103A
1N6104A
1N6105A
1N6106A
1N6107A
1N6108A
1N6109A
1N6110A
1N6111A
1N6112A
1N6113A
1N6114A
1N6115A
1N6116A
1N6117A
1N6118A
1N6119A
1N6120A
1N6121A
1N6122A
1N6123A
1N6124A
1N6125A
1N6126A
1N6127A
1N6128A
1N6129A
1N6130A
1N6131A
1N6132A
1N6133A
1N6134A
1N6135A
1N6136A
1N6137A
(V)
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
REVERSE
LEAKAGE
CURRENT
I
R
(µA)
100
50
20
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ I
T
(V)
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
TEST
CURRENT
I
T
(mA)
175
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
MAXIMUM
CLAMPING
VOLTAGE
VC @ I
PP
(V)
10.5
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
PEAK PULSE
CURRENT
Ipp
tp = 1ms
(A)
47.6
44.6
41.3
37.3
34.5
32.0
29.6
27.5
23.8
22.4
19.9
18.0
16.4
15.0
13.4
12.0
10.9
10.0
9.3
8.5
7.7
7.1
6.5
5.9
5.1
4.8
4.4
4.0
3.6
3.3
3.0
2.8
2.4
2.3
2.0
1.8
TEMPERATURE
COEFFICIENT
OF V
BR
αVz
% / °C
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.085
0.085
0.085
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.105
0.105
0.105
0.110
0.110
MAXIMUM
REVERSE
LEAKAGE
CURRENT (Ir2)
TA=+150°C
(A)
4000
750
500
300
200
200
150
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.
© 1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320

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