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B330A

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size381KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

B330A Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-2

B330A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionLEAD FREE, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current500 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Technical Data
Data Sheet N0712, Rev. A
B330A
B330A SCHOTTKY RECTIFIER
Features
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMA
Circuit Diagram
Applications
Disk Drives
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Condition
-
50% duty cycle @T
C
=75°C,
rectangular wave form
On PC board 9mm
2
island
8.3 ms, half Sine pulse
Max.
30
3
100
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Symbol
V
F1
V
F2
I
R1
I
R2
Junction Capacitance
Typical Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
C
T
L
S
dv/dt
Voltage Rate of Change
Condition
@ 3A, Pulse, T
J
= 25 °C
@ 3 A, Pulse, T
J
= 100 °C
@V
R
= Rated V
R
, Pulse,
T
J
= 25 °C
@V
R
= Rated V
R
, Pulse,
T
J
= 100 °C
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.45
0.41
0.04
4
220
2.0
-
Max.
0.50
0.45
0.5
25
250
-
10,000
Units
V
V
mA
mA
PF
nH
V/s
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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