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MPS4123RLRB

Description
200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size33KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MPS4123RLRB Overview

200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPS4123RLRB Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V

MPS4123RLRB Related Products

MPS4123RLRB MPS4123RLRE MPS4123ZL1 MPS4123RL1 MPS4123RL MPS4123RLRA MPS4123RLRM MPS4123RLRP MPS4123RLRF
Description 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Collector-based maximum capacity 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF 4 pF
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25 25 25 25 25 25 25
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V
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