200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Parameter Name | Attribute value |
Maker | Motorola ( NXP ) |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.2 A |
Collector-based maximum capacity | 4 pF |
Collector-emitter maximum voltage | 30 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 25 |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Maximum power consumption environment | 1.5 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
VCEsat-Max | 0.3 V |
MPS4123RLRB | MPS4123RLRE | MPS4123ZL1 | MPS4123RL1 | MPS4123RL | MPS4123RLRA | MPS4123RLRM | MPS4123RLRP | MPS4123RLRF | |
---|---|---|---|---|---|---|---|---|---|
Description | 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
Collector-based maximum capacity | 4 pF | 4 pF | 4 pF | 4 pF | 4 pF | 4 pF | 4 pF | 4 pF | 4 pF |
Collector-emitter maximum voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 25 | 25 | 25 | 25 | 25 | 25 | 25 | 25 | 25 |
JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power consumption environment | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W | 1.5 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
VCEsat-Max | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V |