2SK3503-A
| Parameter Name | Attribute value |
| Brand Name | Renesas |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | USM |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Manufacturer packaging code | PWSP0003KA-A3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 16 V |
| Maximum drain current (Abs) (ID) | 0.1 A |
| Maximum drain current (ID) | 0.1 A |
| Maximum drain-source on-resistance | 15 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e6 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Bismuth (Sn98Bi2) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SK3503-A | 2SK3503 | 2SK3503-T1-A | 2SK3503(0)-T1-A | |
|---|---|---|---|---|
| Description | 2SK3503-A | 100mA, 16V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, SC-75, 3 PIN | 2SK3503-T1-A | 2SK3503(0)-T1-A |
| Is it lead-free? | Lead free | Contains lead | Lead free | Lead free |
| Is it Rohs certified? | conform to | incompatible | conform to | conform to |
| Parts packaging code | USM | SC-75 | USM | USM |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compli | compli | unknow | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 16 V | 16 V | 16 V | 16 V |
| Maximum drain current (ID) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Maximum drain-source on-resistance | 15 Ω | 15 Ω | 15 Ω | 15 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Brand Name | Renesas | - | Renesas | Renesas |
| Manufacturer packaging code | PWSP0003KA-A3 | - | PWSP0003KA-A3 | PWSP0003KA-A3 |
| Maximum drain current (Abs) (ID) | 0.1 A | 0.1 A | 0.1 A | - |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | - |
| Maximum power dissipation(Abs) | 0.2 W | 0.2 W | 0.2 W | - |
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