2SK3503 datasheet, PDF - EEWORLD Datasheet

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2SK3503: Description100mA, 16V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, SC-75, 3 PIN; CategoryDiscrete semiconductor The transistor; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SK3503 Overview

100mA, 16V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, SC-75, 3 PIN

2SK3503 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	SC-75
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	16 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SK3503 Related Products

	2SK3503	2SK3503-A	2SK3503-T1-A	2SK3503(0)-T1-A
Description	100mA, 16V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, USM, SC-75, 3 PIN	2SK3503-A	2SK3503-T1-A	2SK3503(0)-T1-A
Is it lead-free?	Contains lead	Lead free	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to	conform to	conform to
Parts packaging code	SC-75	USM	USM	USM
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	unknow	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	16 V	16 V	16 V	16 V
Maximum drain current (ID)	0.1 A	0.1 A	0.1 A	0.1 A
Maximum drain-source on-resistance	15 Ω	15 Ω	15 Ω	15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Maximum drain current (Abs) (ID)	0.1 A	0.1 A	0.1 A	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	-
Brand Name	-	Renesas	Renesas	Renesas
Manufacturer packaging code	-	PWSP0003KA-A3	PWSP0003KA-A3	PWSP0003KA-A3

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