2SD1264Q datasheet, PDF - EEWORLD Datasheet

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2SD1264Q: DescriptionPower Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, FULL PACK-3; CategoryDiscrete semiconductor The transistor; File Size77KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD1264Q Overview

Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, FULL PACK-3

2SD1264Q Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

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Power Transistors

2SD1264, 2SD1264A

Silicon NPN triple diffusion planar type

For low-frequency power amplification

For TV vertical deflection output

Complementary to 2SB0940, 2S0940A

16.7

±0.3

Unit: mm

0.7

±0.1

10.0

±0.2

5.5

±0.2

4.2

±0.2

4.2

±0.2

2.7

±0.2

7.5

±0.2

■

Features

•

High collector-emitter voltage (Base open) V

CEO

•

Large collector power dissipation P

•

Full-pack package which can be installed to the heat sink with one screw

3.1

±0.1

Solder Dip

(4.0)

1.4

±0.1

1.3

±0.2

0.5

+0.2

–0.1

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage 2SD1264

(Base open)

2SD1264A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

stg

25°C

Symbol

CBO

CEO

EBO

Rating

200

150

180

2.0

150

−55

+150

°C

Unit

14.0

±0.5

0.8

±0.1

2.54

±0.3

5.08

±0.5

1 2 3

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

■

Electrical Characteristics

25°C

3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage

(Base open)

2SD1264

2SD1264A

EBO

CBO

EBO

FE1 *

FE2

Collector-emitter saturation voltage

Transition frequency

CE(sat)

500

µA,

10 V, I

400 mA

200 V, I

4 V, I

10 V, I

150 mA

10 V, I

400 mA

500 mA, I

50 mA

10 V, I

0.5 A, f

1 MHz

1.0

MHz

Symbol

CBO

CEO

Conditions

µA,

5 mA, I

Min

200

150

180

1.0

240

µA



Typ

Max

Unit

Emitter-base voltage (Collector open)

Base-emitter voltage

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

FE1

60 to 140

100 to 240

Publication date: April 2003

SJD00180BED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

•

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

•

Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

2SD1264Q Related Products

	2SD1264Q	2SD1264AQ
Description	Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, FULL PACK-3
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	150 V	180 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	60
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	2 W	2 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz
Base Number Matches	1	1

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