RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PCP, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1515664086 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 12 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.8 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4500 MHz |
| 2SC4673E | 2SC4673C | 2SC4673D | |
|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PCP, 3 PIN | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PCP, 3 PIN | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PCP, 3 PIN |
| Objectid | 1515664086 | 1515664084 | 1515664085 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 12 V | 12 V | 12 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 40 | 60 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.8 W | 0.8 W | 0.8 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 4500 MHz | 4500 MHz | 4500 MHz |
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