2SB1184F5/Q datasheet, PDF - EEWORLD Datasheet

2SB1184F5/Q: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size117KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SB1184F5/Q Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PSSO-G2
JESD-609 code	e2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Copper (Sn/Cu)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
VCEsat-Max	1 V
Base Number Matches	1

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