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2SB1256C

Description
Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size95KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SB1256C Overview

Power Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN

2SB1256C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)2 A
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)10000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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