CSB631KE datasheet, PDF - EEWORLD Datasheet

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CSB631KE: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size123KB，3 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]; Environmental Compliance

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CSB631KE Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3

CSB631KE Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	CDIL[Continental Device India Pvt. Ltd.]
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	8 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	110 MHz

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Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

TO-126 (SOT-32) Plastic Package

CSB631, CSB631K

CSD600, CSD600K

CSB631, 631K

CSD600, 600K

PNP PLASTIC POWER TRANSISTORS

NPN PLASTIC POWER TRANSISTORS

Low frequency Power Amplifier and Medium Speed Switching Applications

PIN CONFIGURATION

1. EMITTER

2. COLLECTOR

3. BASE

ALL DIMENSIONS IN MM

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current

Total power dissipation up to T

= 25°C

Junction temperature

Collector-emitter saturation voltage

= 0.5 A; I

= 50 mA

D.C. current gain

= 50 mA; V

= 5 V

CBO

CEO

CEsat

631

631K

600

600K

max. 100

120 V

max. 100

120 V

max.

1.0

max.

8.0

max.

150

°C

max.

min.

max.

0.4

320

RATINGS

(at T

=25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

CBO

Collector-emitter voltage (open base)

CEO

max. 100

120 V

Continental Device India Limited

Data Sheet

Page 1 of 3

CSB631KE Related Products

	CSB631KE	CSB631D	CSB631E	CSB631F	CSB631KD	CSB631KF
Description	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]	CDIL[Continental Device India Pvt. Ltd.]
Parts packaging code	SIP	SIP	SIP	SIP	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	120 V	100 V	100 V	100 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	100	160	60	160
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	8 W	8 W	8 W	8 W	8 W	8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz

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