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CSB631E

Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

CSB631E Overview

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3

CSB631E Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-126 (SOT-32) Plastic Package
CSB631, CSB631K
CSD600, CSD600K
CSB631, 631K
CSD600, 600K
PNP PLASTIC POWER TRANSISTORS
NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier and Medium Speed Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.5 A; I
B
= 50 mA
D.C. current gain
I
C
= 50 mA; V
CE
= 5 V
V
CBO
V
CEO
I
C
P
C
T
j
V
CEsat
h
FE
631
631K
600
600K
max. 100
120 V
max. 100
120 V
max.
1.0
A
max.
8.0
W
max.
150
°C
max.
min.
max.
0.4
60
320
V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
V
CBO
Collector-emitter voltage (open base)
V
CEO
max. 100
max. 100
120 V
120 V
Continental Device India Limited
Data Sheet
Page 1 of 3

CSB631E Related Products

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Description Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, PLASTIC PACKAGE-3
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
Parts packaging code SIP SIP SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 100 V 100 V 100 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 160 60 100 160
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 8 W 8 W 8 W 8 W 8 W 8 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 110 MHz 110 MHz 110 MHz 110 MHz 110 MHz 110 MHz

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