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FS10UMJ-3

Description
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FS10UMJ-3 Overview

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FS10UMJ-3 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
MITSUBISHI Nch POWER MOSFET
FS10UMJ-3
HIGH-SPEED SWITCHING USE
FS10UMJ-3
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f
3.6
0.8
D
0.5
2.6
2.54
2.54
q w e
wr
¡4V
DRIVE
¡V
DSS ................................................................................
150V
¡r
DS (ON) (MAX) ...........................................................
160mΩ
¡I
D .........................................................................................
10A
¡Integrated
Fast Recovery Diode (TYP.)
.............
90ns
q
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
150
±20
10
40
10
10
40
45
–55 ~ +150
–55 ~ +150
2.0
4.5MAX.
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 100µH
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