SH8M14TB datasheet, PDF - EEWORLD Datasheet

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SH8M14TB: DescriptionPower Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size637KB，11 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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SH8M14TB Overview

Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

SH8M14TB Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	9 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2 W
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON

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Data Sheet

4V Drive Nch + Pch MOSFET

SH8M14



Structure

Silicon N-channel MOSFET/

Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) High power package(SOP8).

3) Low voltage drive(4V drive).



Dimensions

(Unit : mm)

SOP8

(8)

(5)

(1)

(4)



Application

Switching



Packaging specifications

Type

SH8M14

Package

Code

Basic ordering unit (pieces)

Taping

2500





Inner circuit

(8)

(7)

(6)

(5)



Absolute maximum ratings

(Ta = 25C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body Diode)

Power dissipation

Channel temperature

Range of storage temperature

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Symbol

DSS

GSS

Tch

Tstg

Continuous

Pulsed

Continuous

Pulsed

Limits

Tr1 : N-ch Tr2 : P-ch

30

20

9

7

36

28

1.6

1.6

28

2.0

1.4

150

55

150

Unit

W / TOTAL

W / ELEMENT

C

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗2

∗1

(1)

(2)

(3)

∗1

(4)

∗1

ESD PROTECTION DIODE

∗2

BODY DIODE

www.rohm.com

1/10

2011.06 - Rev.A

SH8M14TB Related Products

	SH8M14TB	SH8M14GZETB
Description	Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant	compli
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	9 A	9 A
Maximum drain-source on-resistance	0.028 Ω	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	36 A	36 A
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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