Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN
Parameter Name | Attribute value |
Maker | NEC Electronics |
package instruction | LEAD FREE, MP-25, TO-220, 3 PIN |
Reach Compliance Code | unknown |
Avalanche Energy Efficiency Rating (Eas) | 49 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V |
Maximum drain current (ID) | 40 A |
Maximum drain-source on-resistance | 0.023 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 100 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN SILVER COPPER |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
NP40N055CHE-S12-AZ | NP40N055KHE-E2-AY | NP40N055NHE-S18-AY | NP40N055DHE-S12-AY | NP40N055EHE-E1-AY | NP40N055KHE-E1-AY | NP40N055EHE-E2-AY | NP40N055MHE-S18-AY | |
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Description | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN |
Maker | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics |
package instruction | LEAD FREE, MP-25, TO-220, 3 PIN | LEAD FREE, MP-25ZK, TO-263, 3 PIN | LEAD FREE, MP-25SK, TO-262, 3 PIN | LEAD FREE, MP-25, TO-262, 3 PIN | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25ZK, TO-263, 3 PIN | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25K, TO-220, 3 PIN |
Reach Compliance Code | unknown | unknown | compliant | unknown | unknown | unknown | unknown | compliant |
Avalanche Energy Efficiency Rating (Eas) | 49 mJ | 49 mJ | 49 mJ | 49 mJ | 49 mJ | 49 mJ | 49 mJ | 49 mJ |
Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V |
Maximum drain current (ID) | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A |
Maximum drain-source on-resistance | 0.023 Ω | 0.023 Ω | 0.023 Ω | 0.023 Ω | 0.023 Ω | 0.023 Ω | 0.023 Ω | 0.023 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB | TO-263AB | TO-262AA | TO-262AA | TO-263AB | TO-263AB | TO-263AB | TO-220AB |
JESD-30 code | R-PSFM-T3 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 |
JESD-609 code | e1 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 3 | 3 | 2 | 2 | 2 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | YES | NO | NO | YES | YES | YES | NO |
Terminal surface | TIN SILVER COPPER | TIN | MATTE TIN | TIN | TIN | TIN | TIN | MATTE TIN |
Terminal form | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |