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NP40N055CHE-S12-AZ

Description
Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size206KB,10 Pages
ManufacturerNEC Electronics
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NP40N055CHE-S12-AZ Overview

Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN

NP40N055CHE-S12-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionLEAD FREE, MP-25, TO-220, 3 PIN
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)49 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

NP40N055CHE-S12-AZ Related Products

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Description Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction LEAD FREE, MP-25, TO-220, 3 PIN LEAD FREE, MP-25ZK, TO-263, 3 PIN LEAD FREE, MP-25SK, TO-262, 3 PIN LEAD FREE, MP-25, TO-262, 3 PIN LEAD FREE, MP-25ZJ, TO-263, 3 PIN LEAD FREE, MP-25ZK, TO-263, 3 PIN LEAD FREE, MP-25ZJ, TO-263, 3 PIN LEAD FREE, MP-25K, TO-220, 3 PIN
Reach Compliance Code unknown unknown compliant unknown unknown unknown unknown compliant
Avalanche Energy Efficiency Rating (Eas) 49 mJ 49 mJ 49 mJ 49 mJ 49 mJ 49 mJ 49 mJ 49 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V 55 V 55 V 55 V 55 V
Maximum drain current (ID) 40 A 40 A 40 A 40 A 40 A 40 A 40 A 40 A
Maximum drain-source on-resistance 0.023 Ω 0.023 Ω 0.023 Ω 0.023 Ω 0.023 Ω 0.023 Ω 0.023 Ω 0.023 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB TO-262AA TO-262AA TO-263AB TO-263AB TO-263AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
JESD-609 code e1 e3 e3 e3 e3 e3 e3 e3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 2 3 3 2 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 100 A 100 A 100 A 100 A 100 A 100 A 100 A 100 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES NO NO YES YES YES NO
Terminal surface TIN SILVER COPPER TIN MATTE TIN TIN TIN TIN TIN MATTE TIN
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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