NP40N055KHE-E2-AY datasheet, PDF

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NP40N055KHE-E2-AY: DescriptionPower Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size206KB，10 Pages; ManufacturerNEC Electronics

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NP40N055KHE-E2-AY Overview

Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN

NP40N055KHE-E2-AY Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	LEAD FREE, MP-25ZK, TO-263, 3 PIN
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	49 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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Description	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 40A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	LEAD FREE, MP-25ZK, TO-263, 3 PIN	LEAD FREE, MP-25SK, TO-262, 3 PIN	LEAD FREE, MP-25, TO-262, 3 PIN	LEAD FREE, MP-25, TO-220, 3 PIN	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25ZK, TO-263, 3 PIN	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25K, TO-220, 3 PIN
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown	unknown	compliant
Avalanche Energy Efficiency Rating (Eas)	49 mJ	49 mJ	49 mJ	49 mJ	49 mJ	49 mJ	49 mJ	49 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V	55 V	55 V	55 V	55 V
Maximum drain current (ID)	40 A	40 A	40 A	40 A	40 A	40 A	40 A	40 A
Maximum drain-source on-resistance	0.023 Ω	0.023 Ω	0.023 Ω	0.023 Ω	0.023 Ω	0.023 Ω	0.023 Ω	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-262AA	TO-262AA	TO-220AB	TO-263AB	TO-263AB	TO-263AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3
JESD-609 code	e3	e3	e3	e1	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	3	3	3	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	YES	YES	YES	NO
Terminal surface	TIN	MATTE TIN	TIN	TIN SILVER COPPER	TIN	TIN	TIN	MATTE TIN
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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