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NP34N055ILE-AY

Description
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size177KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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NP34N055ILE-AY Overview

TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252

NP34N055ILE-AY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)34 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
surface mountYES

NP34N055ILE-AY Related Products

NP34N055ILE-AY NP34N055ILE-E2-AY
Description TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252 TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252
Is it Rohs certified? conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant
Configuration Single Single
Maximum drain current (Abs) (ID) 34 A 34 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 88 W 88 W
surface mount YES YES
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