NP34N055ILE-E2-AY datasheet, PDF

NP34N055ILE-E2-AY: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252; CategoryDiscrete semiconductor The transistor; File Size177KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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NP34N055ILE-E2-AY Overview

TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	34 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	88 W
surface mount	YES

	NP34N055ILE-E2-AY	NP34N055ILE-AY
Description	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,34A I(D),TO-252
Is it Rohs certified?	conform to	conform to
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	compliant	compliant
Configuration	Single	Single
Maximum drain current (Abs) (ID)	34 A	34 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	88 W	88 W
surface mount	YES	YES

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