DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon junction FETs
FEATURES
•
High speed switching
•
Interchangeability of drain and source connections
•
Low R
DSon
at zero gate voltage (<8
Ω
for J108).
APPLICATIONS
•
Analog switches
•
Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSoff
PARAMETER
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
I
DSS
drain current
J108
J109
J110
P
tot
total power dissipation
up to T
amb
= 50
°C
V
GS
= 0; V
DS
= 5 V
I
D
= 1
µA;
V
DS
= 5 V
CONDITIONS
handbook, halfpage
2
J108; J109; J110
PINNING - TO-92
PIN
1
2
3
SYMBOL
g
s
d
gate
source
drain
DESCRIPTION
1
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
MIN.
−
−3
−2
−0.5
80
40
10
−
MAX.
±25
−10
−6
−4
−
−
−
400
UNIT
V
V
V
V
mA
mA
mA
mW
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon junction FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
up to T
amb
= 50
°C
open drain
open source
CONDITIONS
−
−
−
−
−
J108; J109; J110
MIN.
MAX.
±25
−25
−25
50
400
150
150
V
V
V
UNIT
mA
mW
°C
°C
−65
−
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
(BR)GSS
V
GSoff
PARAMETER
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
I
DSS
drain current
J108
J109
J110
I
GSS
I
DSX
R
DSon
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
V
GS
=
−15
V; V
DS
= 0
V
GS
=
−10
V; V
DS
= 5 V
V
GS
= 0; V
DS
= 100 mV
−
−
−
−
−
−
8
12
18
Ω
Ω
Ω
V
GS
= 0; V
DS
= 15 V
80
40
10
−
−
−
−
−
−
−
−
−
−
−3
3
mA
mA
mA
nA
nA
CONDITIONS
I
G
=
−1 µA;
V
DS
= 0
I
D
= 1
µA;
V
DS
= 5 V
−3
−2
−0.5
−
−
−
−10
−6
−4
−
MIN.
−
TYP.
MAX.
−25
V
V
V
V
V
UNIT
1996 Jul 30
3
Philips Semiconductors
Product specification
N-channel silicon junction FETs
DYNAMIC CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
C
is
PARAMETER
input capacitance
CONDITIONS
V
DS
= 0; V
GS
=
−10
V; f = 1 MHz
V
DS
= 0; V
GS
= 0; f = 1 MHz;
T
amb
= 25
°C
C
rs
t
d
t
on
t
s
t
off
Note
1. Test conditions for switching times are as follows:
V
DD
= 1.5 V; V
GS
= 0 to V
GSoff
(all types)
V
GSoff
=
−12
V; R
L
= 100
Ω
(J108)
V
GSoff
=
−7
V; R
L
= 100
Ω
(J109)
V
GSoff
=
−5
V; R
L
= 100
Ω
(J110).
reverse transfer capacitance
V
DS
= 0; V
GS
=
−10
V; f = 1 MHz
note 1
Switching times;
see Fig.2
delay time
turn-on time
storage time
turn-off time
2
4
4
6
J108; J109; J110
TYP.
15
50
8
MAX.
30
85
15
−
−
−
−
UNIT
pF
pF
pF
ns
ns
ns
ns
handbook, halfpage
50
Ω
10
µF
0.1
µF
VDD
10 nF
RL
SAMPLING
SCOPE
50
Ω
DUT
50
Ω
MGE773
Fig.2 Switching circuit.
1996 Jul 30
4
Philips Semiconductors
Product specification
N-channel silicon junction FETs
J108; J109; J110
handbook, full pagewidth
VGS = 0 V
Vi
10%
VGS off
90%
toff
ts
90%
Vo
10%
tf
td
ton
tr
MGE774
Fig.3 Input and output waveforms.
1996 Jul 30
5