K6L1008V2C-RD10 datasheet, PDF

K6L1008V2C-RD10: DescriptionStandard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32; Categorystorage storage; File Size211KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6L1008V2C-RD10 Overview

Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP1
package instruction	TSOP1-R, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Minimum standby current	2 V
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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